As per latest industry analysis published by Fact.MR, the global 3D through-silicon-via (TSV) devices market was valued at around US$ 5 Bn in 2020, and is expected to reach a valuation of US$ 15 Bn by 2031, accelerating rapidly at a CAGR of 20%. Demand for advanced LED packaging is high and is projected to increase at a CAGR of 18% across the assessment period of 2021 to 2031.
Key Points Covered in 3D Through-Silicon-Via Devices Industry Survey:
- Market Estimates and Forecasts (2016-2031)
- Key Drivers and Restraints Shaping Market Growth
- Global 3D TSV Devices Market Size in 2021
- Segment-wise, Country-wise, and Region-wise Analysis
- Global 3D TSV Devices Market Growth to 2031
- Competition Mapping and Benchmarking
- Brand Share and Market Share Analysis
- Key Product Innovations and Regulatory Climate
- COVID-19 Impact on Demand for 3D Through-Silicon-Via Devices and How to Navigate
- Recommendation on Key Winning Strategies
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Revenue Analysis of 3D TSV Devices from 2016 to 2020 Compared to Market Outlook for 2021 to 2031
As per Fact.MR, a market research and competitive intelligence provider, the global market for 3D through-silicon-via devices was valued at US$ 5 Bn in 2020.
Rising demand for electronic device miniaturization and growing use of innovative chip architectures with enhanced characteristics are creating growth opportunities for manufacturers of 3D through-silicon-via devices.
The semiconductor industry is leveraging 3D TSV technology for developing biomedical devices with sensors & processors and highly heterogeneous integration, which, in turn, is aiding demand traction for 3D TSV devices.
3D TSV in dynamic random-access memory (DRAM) that stores each bit of data in a separate tiny capacitor within an integrated circuit is propelling the growth of the market. 3D TSV technology has also gained notable traction for enhancing 3D TSV logic & memory devices, non-memory, and CMOS such as televisions, smartphones, and tablet PCs.
These factors are expected to drive demand for 3D through-silicon-via devices rapidly at 20% CAGR from 2021 to 2031.
How is Superior Performance over Conventional Techniques Creating Opportunities for 3D Through-Silicon-Via Device Suppliers?
3D through-silicon-via device is a high performance interconnect technique that passes through a silicon wafer by a vertical electrical connection which lower power consumption and gives a better electrical performance.
Growing requirement for 3D stacking to shorten the length of interconnection, reduce power intake, accelerate signal speed, and decrease power dissipation has been driving the demand for 3D TSV technology.
The semiconductor industry is witnessing burgeoning demand for three-dimensional (3D) through-silicon-via technology devices with superior functionality, better performance, smaller form factor, and reduced overall cost.
Global 3D TSV device manufacturers are focusing on development of innovation-driven packaging solutions. Several semiconductor manufacturers and research institutes have considered 3D packaging based on z-axis TSV stacking concept, which is further creating opportunities for stakeholders in the global 3D TSV devices market.
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What are the Restraints being Encountered by 3D TSV Device Manufacturers?
Numerous negative effects of TSV devices such as delay, area, and power overhead caused by non-negligible TSV area and capacitance are limiting their sales. As widespread benefits of 3D through-silicon-via devices such as reduction of wire length and high performance from 3D integration rely on the size and capacitance of TSV, the market is witnessing restricted growth.
To counter such challenges, top manufacturers of 3D TSV CMOS image sensors are increasingly focusing on reducing overall semiconductor cost, form factor, and time-to-market.
Which Region Offers Lucrative Opportunity for 3D Through-Silicon-Via Device Producers?
The Asia Pacific region leads with more than 50% share in the 3D through-silicon-via devices market. Asia Pacific is also one of the most active manufacturing hubs in the world.
Rising popularity of smartphones and demand for 3D TSV memory technologies have increased demand for 3D TSV imaging and opto-electronics, thereby, creating a wide range of opportunities in the region.
As silicon wafers are widely used to manufacture smartphones, introduction of 5G technology is expected to boost the sales of 5G smartphones, which may grow the market in the telecommunication sector.
Increasing demand for CMOS image sensors in Japan as well as demand for collective laser assisted bonding process for 3D TSV integration using nonconductive paste (NCP) in South Korea are supplementing demand for 3D through-silicon-via devices throughout these countries, and allows the simultaneous stacking of many TSV dies to enhance productivity.
What is the 3D TSV Devices Demand Outlook for the U.S.?
The U.S. market for 3D through-silicon-via devices was valued at over US$ 800 Mn in 2020. Increasing R&D activities related to 3D IC design is aiding market growth. Rising use of TSV technology for 3D packaging in the semiconductor sector is being fueled by the requirement to enhance performance and lower time delays.
Also, growing use of TSV technology for functional integration along with wafer fabrication and assembly in the semiconductor sector and rising sales of 3D TSV sensors in the U.S. are spurring market growth.
What are the Growth Opportunities for 3D TSV Device Providers across China?
By 2031, China is expected to enjoy a market value of roughly US$ 4 Bn. Manufacturers of 3D TSV devices in China investing in next generation of 3D TSV technology and shorter product development cycles, which have further driven the exports of electronic goods.
With rising sales of 3D TSV MEMS and sensors and growing advancements in consumer applications such as smartphones, tablets and wearable products, the CIS and MEMS markets are expected to exhibit robust growth. This, in turn, fueling market growth in China.
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Why is the Popularity of Advanced LED Packaging Rising Rapidly?
Increasing use of advanced light-emitting diodes (LED) packaging in products has promoted the development of higher power, greater density, and lower-cost devices. Use of three-dimensional (3D) packaging through-silicon-via (TSV) technology allows a high density of vertical interconnects, unlike 2D packaging.
Integrated TSV circuits reduce connection lengths, and thus, smaller parasitic capacitance, inductance, and resistance are required where a combination of monolithic and multifunctional integration is done efficiently, which provides high-speed low-power interconnects.
The embedded design with thin silicon membranes at the bottom optimizes thermal contact, and therefore minimizes thermal resistance. Silicon via (TSV) provides electrical contact to surface-mounted devices and mirrored sidewalls increase package reflectivity and improve the light efficiency.
SUSS AltaSpray technology is capable of coating integration of 90° corners, KOH (potassium hydroxide) etched cavities, through silicon via (TSV), ranging from a few microns to 600μm or more.
The ability to produce conformal resist coatings on severe topography, such as TSV, makes them the ideal choice for wafer-level packaging in LED, and advancements of 3D TSV technology in LED packaging will drive market growth over the decade.
Which Application is Fueling Sales of 3D Through-Silicon-Via Devices?
The consumer electronics sector is thriving due to growing global penetration of smartphones, which can be attributed to easy availability of high-tech features such as powerful camera systems, high-resolution displays, followed by economical mobile data services in most regions.
Increasing demand for 3D TSV technology is rapidly changing the consumer electronics space, with users demanding improved architecture in electronic products.
Leveraging its capability to deliver advanced integrated chip models with lesser footprint and decreased capacitance, three-dimensional (3D) through-silicon-via technology is progressively being used in improving memory, logic functions of electronics, CMOS, and non-memory, such as tablet PCs, smartphones, and televisions, among others.
Propagation of 3D TSV in the DRAM memory vertical with pioneering technology platforms such as Wide I/O, High Bandwidth Memory (HBM), innovations in 3D TSV technology, and Hybrid Memory Cube (HMC) is also contributing to market growth.
How Has COVID-19 Impacted Demand for 3D TSV Devices?
In light of the recent COVID-19 outbreak, the operations of numerous industries have either been temporarily halted or are functioning with a minimal workforce due to enforced lockdowns and imposed restrictions by respective governing bodies.
The global 3D TSV market is no different, and this factor is anticipated to have a significantly negative impact on revenue growth of this industry.
3D TSV technology for biomedical devices and latest trends of global 3D TSV devices are major factors supporting market growth. Change in consumer demand and buying patterns during the COVID-19 pandemic is somewhat positively impacting the progress of the 3D through-silicon-via devices market.
Top manufacturers of 3D TSV sensors are experiencing cut-throat competition due to rise in the sales of 3D TSV CMOS image sensors across the world and numerous players in this space.
- In October 2019, Samsung developed the industry’s first 12-layer 3D packaging for DRAM products. The technology uses TSVs to create high-capacity high bandwidth memory devices for applications, such as higher-end graphics, FPGAs, and compute cards.
3D TSV Devices Industry Report Scope
Market size value in 2020
USD 5 Billion
Market forecast value in 2031
USD 15 Billion
CAGR of 20% from 2021 to 2031
Historical Data Available for
|US$ Mn for Value & ‘000 Units for Volume|
Key Regions Covered
Key Countries Covered
Key Market Segments Covered
Key Companies Profiled
Available upon Request
Key Segments in 3D TSV Devices Industry Research
- 3D TSV Memory
- 3D TSV Advanced LED Packaging
- 3D TSV CMOS Image Sensors
- 3D TSV Imaging and Opto-Electronics
- 3D TSV MEMS
- 3D TSV Devices Via First Process Realization
- 3D TSV Devices Via Middle Process Realization
- 3D TSV Devices Via Last Process Realization
- Use of 3D TSV Devices in Consumer Electronics
- Use of 3D TSV Devices in Mobile Devices
- Use of 3D TSV Devices in Processors in Computers and Laptops
- Use of 3D TSV Devices in Automotive Sector
- Use of 3D TSV Devices in Automotive Sensors
- Use of 3D TSV Devices in Automotive Body Electronics
- Use of 3D TSV Devices in IT and Telecom
- Use of 3D TSV Devices in Communications
- Use of 3D TSV Devices in Information Technology & Networking
- Use of 3D TSV Devices in Healthcare Sector
- Use of 3D TSV Devices in Military, Aerospace & Defense Sector
- Use of 3D TSV Devices in Consumer Electronics
- FAQs -
The global 3D through-silicon-via devices market is currently worth more than US$ 5 Bn.
From 2016-2020, sales of 3D TSV devices registered a CAGR of 10%.
Major factors driving demand are miniaturization of electronic devices, increasing need for saving space in packages, and shorter reaction time.
Sales of 3D through-silicon-via devices in India are forecasted to reach over US$ 600 Mn by 2031.
Key players operating in this space are Amkor Technology, Inc., Broadcom Ltd., Pure Storage, Inc., STATS ChipPAC Ltd., and SK Hynix Inc.
The Asia Pacific region, with 50% global market share, will largely contribute to the growth of 3D through-silicon-via devices revenue.
3D through-silicon-via device sales in Germany are expected to rise at a CAGR of 15% over the forecast period of 2021 to 2031.
Advanced LED packaging application accounts for a share of 40% in the market.
The U.S., China, U.K, Japan, and South Korea are expected to drive most of the demand for 3D TSV devices.
The global market is anticipated to surge at a CAGR of 20% over the forecast period of 2021 to 2031.